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Merck
CN

752509

Bismuth antimony telluride

beads, 99.99% trace metals basis

别名:

Antimony bismuth telluride, BiSbTe

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化学文摘社编号:
UNSPSC Code:
12352300
PubChem Substance ID:
MDL number:
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InChI

1S/Bi.3Sb.6Te

SMILES string

[Te]1[Sb]2[Te][Sb]3[Te][Sb]1[Te][Bi]([Te]2)[Te]3

InChI key

BOOKHSKFBCVCND-UHFFFAOYSA-N

assay

99.99% trace metals basis

form

beads

composition

Bi0.5Sb1.5Te3

greener alternative product characteristics

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General description

Thermoelectric properties of bismuth antimony telluride (BiSbTe) has been studied in detail.1 A study reports the preparation of p-type BiSbTe by melting solidification method in static magnetic field. Concentration of holes in p-type BiSbTe can be regulated by tellurium evaporation annealing technique. Thermoelectrical properties of dense p-type BiSbTe was compared to nanosized antimony-doped p-type BiSbTe. The properties were found to be enhanced.
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Hazard Classifications

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Chronic 2

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

法规信息

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分析证书(COA)

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Polvani, D. A.; Meng, J. F.; Chandra, S. N. V.; Sharp, J.; Badding, J. V.
Chemistry of Materials, 13, 2068-2068 (2001)
Melting and solidification of bismuth antimony telluride under a high magnetic field: A new route to high thermoelectric performance
Luo Y, et al.
Nano Energy, 15, 709- 718 (2015)
Tellurium-evaporation-annealing for p-type bismuth?antimony?telluride thermoelectric materials
Kim DH, et al.
J. Alloy Compounds, 548, 126-132 (2013)
Bed Poudel et al.
Science (New York, N.Y.), 320(5876), 634-638 (2008-03-22)
The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100 degrees C can be achieved in a
Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth?tellurium?antimony alloy
Bernard-Granger G, et al.
Acta Materialia, 60(11), 4523-4530 (2012)

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