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Di-n-butylammonium lead(II) tetra iodide is used as a precursor material in the fabrication of lead halide perovskite solar cells. Perovskite solar cells based on DBAPbI4 have shown high power conversion efficiencies and have attracted significant attention as a low-cost and efficient alternative to traditional silicon-based solar cells. DBAPbI4-based perovskite materials find application in thin-film electronics such as transistors and light-emitting diodes (LEDs).

Organic-inorganic hybrid perovskittes based semiconducting materials exhibit excellent properties such as long charge carrier lifetime and diffusion length, and high photolumiscence quantum yield. These properties render the perovskite materials useful for applications in light emitting diodes (LEDs), lasers and photodetectors. The bis[n-butylammonium] tetraiodopumbate is 2D-layered perovskite and finds applications as violet emitter in LEDs.