SMILES string
B#N
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
description
Bandgap: 5.97 eV, Raman Peak: 1370 /cm-1, h-BN Coverage: 100% with sporadic adlayers, (Monolayer h-BN)
size
6 in. (6 in.) × 150 mm (150 mm)
grain size
>4 μm
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General description
6″ x 6″ h-BN/copper foil pieces are secured to their underlying plastic containers with four small Kapton tape pieces, one in each corner. Gently peel the tape or cut off the corners of the foil to release the foil from the plastic container.
Application
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (∼ 6 eV that can be tuned to ∼2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings .
Preparation Note
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
For all hBN-on-copper products, the displayed range represents electronic data that were obtained after transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
For all hBN-on-copper products, the displayed range represents electronic data that were obtained after transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
存储类别
13 - Non Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
法规信息
新产品
此项目有
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23), 3905-3905 (2019)
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries
Monolayer to Bulk Properties of Hexagonal Boron Nitride
Wickramaratne D, et al.
The Journal of Physical Chemistry, 122, 25524-25529 (2018)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Luigi Stagi et al.
Materials (Basel, Switzerland), 12(23) (2019-11-30)
The discovery of graphene has paved the way for intense research into 2D materials which is expected to have a tremendous impact on our knowledge of material properties in small dimensions. Among other materials, boron nitride (BN) nanomaterials have shown
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