InChI
1S/Ta
SMILES string
[Ta]
InChI key
GUVRBAGPIYLISA-UHFFFAOYSA-N
vapor pressure
<0.01 mmHg ( 537.2 °C)
assay
≥99.9%
form
foil
autoignition temp.
572 °F
manufacturer/tradename
Goodfellow 863-424-85
resistivity
13.5 μΩ-cm, 20°C
bp
5425 °C (lit.)
mp
2996 °C (lit.)
density
16.69 g/cm3 (lit.)
General description
For updated SDS information please visit www.goodfellow.com.
Legal Information
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法规信息
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Xinjian Feng et al.
Nano letters, 10(3), 948-952 (2010-02-12)
Tantalum nitride (Ta3N5) has a band gap of approximately 2.07 eV, suitable for collecting more than 45% of the incident solar spectrum energy. We describe a simple method for scale fabrication of highly oriented Ta3N5 nanotube array films, by anodization
Zhongli Cai et al.
Radiation research, 165(3), 365-371 (2006-02-24)
Both thick and thin films of pGEMR-3Zf- plasmid DNA deposited on a tantalum foil were exposed to soft X rays (effective energy of 14.8 keV) for various times in air under a relative humidity of 45% (Gamma approximately 6, where
J G Sen Gupta
Talanta, 32(1), 1-6 (1985-01-01)
An improved graphite furnace atomic-absorption method has been developed for the determination of Sc, Y and the rare-earth elements in silicate rocks and related materials. The method, which involves the separation of the lanthanides by ion-exchange followed by their determination
H H Pieper et al.
The Review of scientific instruments, 83(5), 055110-055110 (2012-06-07)
We present a versatile system for the preparation of oxide crystal surfaces in the ultra-high vacuum (UHV) at temperatures up to 1300 K. Thermal treatment is accomplished by direct current heating of a tantalum foil in contact with the oxide
Tantalum foil used in closing antro-oral fistulas.
E J McCLUNG et al.
United States Armed Forces medical journal, 2(8), 1183-1186 (1951-08-01)
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