一般描述
ZnO is a semiconductor with a wide band gap. Point defects in the structure define the electrical conductivity of the oxide. Doping these point defects with Al, In and Ga gives in a highly conductive n –type zinc oxide. Defect free ZnO can also be achieved by annealing the oxide in reducing environment. It also exhibits excellent optical transmission properties. Doped ZnO can form transparent conductors which may be useful in various energy-based applications.1
应用
用于制备NaZnSiO3OH，一种新型手性骨架材料，其在离子交换、吸附或催化方面具有潜在的应用价值。
警示用语：
Warning
危险声明
预防措施声明
危险分类
Aquatic Acute 1 - Aquatic Chronic 1
储存分类代码
11 - Combustible Solids
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves
法规信息
新产品
此项目有
Rizwan Wahab et al.
Journal of biomedical nanotechnology, 9(7), 1181-1189 (2013-08-06)
This paper reports the synthesis and characterization of ZnO nanoparticles prepared by soft chemical process. The nanoparticles of ZnO possess wurtzite hexagonal phase and were used for the induction of cell death in malignant human T98G gliomas, KB epithermoids and
Alexander Lange et al.
Journal of nanoscience and nanotechnology, 13(7), 5209-5214 (2013-08-02)
Organic solar cells are a favorable alternative to their inorganic counterparts because the functional layers of these devices can be processed with printing or coating on a large scale. In this study, a novel polymer was synthesized, blended with fullerene
Dadong Guo et al.
Journal of nanoscience and nanotechnology, 13(6), 3769-3777 (2013-07-19)
Nanomaterials, including zinc oxide (ZnO) nanoparticles, are being developed for a variety of commercial products. Recent reports showed that cells exposed to ZnO nanoparticles produced severe cytotoxicity accompanied by oxidative stress and genotoxicity. To understand the possible mechanism underlying oxidative
Min Su Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3582-3585 (2013-07-19)
Metal catalyst-free ZnO nanorods were grown on PS with buffer layers grown at 450 degrees C by plasma-assisted molecular beam epitaxy. Room temperature and temperature-dependent photoluminescence were carried out to investigate the optical properties of the ZnO nanorods with the
Jeongmin Kang et al.
Journal of nanoscience and nanotechnology, 13(5), 3526-3528 (2013-07-19)
ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in
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