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线性分子式:
SiO2
化学文摘社编号:
分子量:
60.08
NACRES:
SB.52
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
238-878-4
MDL number:
产品名称
二氧化硅, washed and calcined, analytical reagent
InChI key
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
InChI
1S/O2Si/c1-3-2
SMILES string
O=[Si]=O
form
granular
quality
washed and calcined, analytical reagent
impurities
≤0.2% Soluble in HCl
loss
≤0.1% loss on ignition
granulation
0.1-0.5 mm (min.70%)
anion traces
chloride (Cl-): ≤100 mg/kg
Quality Level
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Application
Silicon dioxide may be used to produce silicon by electrochemical reduction in the presence of calcium chloride (CaCl2) electrolyte.
General description
Silicon dioxide (SiO2) exists in three crystalline forms, namely quartz, tridymite and cristobalite. It reacts with hydrofluoric acid to form silicon tetrafluoride (SiF4) and water. Silicates are formed on reacting SiO2 with alkali melts. SiO2 is the main component in glass, brick and concrete and also forms the insulator in silicon devices. The alteration of the surface of SiO2 with (3-aminopropyl)triethoxysilane (APTES) for binding lactate dehydrogenase (LDH) to form an amino layer has been reported. The silicon-silicon dioxide structure has been investigated at liquid nitrogen temperature by electron spin resonance spectra.
存储类别
13 - Non Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Pinpoint and bulk electrochemical reduction of insulating silicon dioxide to silicon.
Nohira T, et al.
Nature Materials, 2(6), 397-401 (2003)
Study of silicon-silicon dioxide structure by electron spin resonance I.
Nishi Y.
Japanese Journal of Applied Physics, 10(1), 52-52 (1971)
Electronic structure of silicon dioxide (a review).
Nekrashevich SS and Gritsenko VA.
Physics of the Solid State, 56(2), 207-222 (2014)
Eagleson M.
Concise Encyclopedia Chemistry, 983-984 (1994)
Surface modification of silicon dioxide, silicon nitride and titanium oxynitride for lactate dehydrogenase immobilization.
Saengdee P, et al.
Biosensors And Bioelectronics, 67, 134-138 (2015)
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