- Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2).
Advanced materials (Deerfield Beach, Fla.) (2015-07-04)
Kunttal Keyshar, Yongji Gong, Gonglan Ye, Gustavo Brunetto, Wu Zhou, Daniel P Cole, Ken Hackenberg, Yongmin He, Leonardo Machado, Mohamad Kabbani, Amelia H C Hart, Bo Li, Douglas S Galvao, Antony George, Robert Vajtai, Chandra Sekhar Tiwary, Pulickel M Ajayan
PMID26140355
摘要
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.