237264
Resolve-Al La
99%
别名:
La(tmhd)3, 三(2,2,6,6-四甲基-3,5-庚二酮酸)镧
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关于此项目
线性分子式:
La(OCC(CH3)3CHCOC(CH3)3)3
化学文摘社编号:
分子量:
688.71
MDL编号:
UNSPSC代码:
12142201
PubChem化学物质编号:
NACRES:
NA.21
方案
99%
表单
powder or crystals
沸点
370 °C (lit.)
mp
128-131 °C (lit.)
SMILES字符串
CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C
InChI
1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;
InChI key
IXHLTRHDDMSNAP-LWTKGLMZSA-K
其他说明
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法律信息
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
法规信息
新产品
Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)
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