325171
氮化硅
predominantly α-phase, ≤10 micron
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关于此项目
线性分子式:
Si3N4
化学文摘社编号:
分子量:
140.28
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
质量水平
表单
powder
粒径
≤10 micron
密度
3.44 g/mL at 25 °C (lit.)
SMILES字符串
N12[Si]34N5[Si]16N3[Si]25N46
InChI
1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6
InChI key
HQVNEWCFYHHQES-UHFFFAOYSA-N
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储存分类代码
11 - Combustible Solids
WGK
nwg
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
Nazar Ileri et al.
Physical chemistry chemical physics : PCCP, 15(3), 965-971 (2012-12-06)
Millimeter sized arrays of uniformly-distributed nanopores (180-220 nm) were created in thin (200 nm) silicon nitride membranes using interferometric lithography. Molecular transport properties of the fabricated devices were investigated experimentally and compared with those of state-of-the-art polycarbonate track etched membranes.
Weihua Guan et al.
Lab on a chip, 13(7), 1431-1436 (2013-02-16)
The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges
Jinglin Kong et al.
Journal of nanoscience and nanotechnology, 13(6), 4010-4016 (2013-07-19)
In recent years, nanopore has attracted broad attention as an essential technique for DNA sequencing and nanoparticle sensing. This work presented a fundamental study of nanoparticle translocation through silicon nitride nanopores. Since particles with rather high charge to mass ratio
Petru Ghenuche et al.
Physical review letters, 109(14), 143903-143903 (2012-10-23)
We demonstrate that almost 100% of incident photons can interact with a monolayer of scatterers in a symmetrical environment. Nearly perfect optical extinction through free-standing transparent nanorod arrays has been measured. The sharp spectral opacity window, in the form of
Tingyin Ning et al.
Optics express, 21(2), 2012-2017 (2013-02-08)
We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) ×
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