vapor density
3.5 (vs air)
vapor pressure
1254 mmHg ( 20 °C)
description
film resistivity > 50 Ω-cm
assay
≥99.99% trace metals basis
autoignition temp.
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES string
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI key
MROCJMGDEKINLD-UHFFFAOYSA-N
General description
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
Application
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
supp_hazards
存储类别
2A - Gases
wgk
WGK 1
flash_point_f
-34.6 °F
flash_point_c
-37 °C
ppe
Faceshields, Gloves, Goggles, multi-purpose combination respirator cartridge (US)
法规信息
新产品
此项目有
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
Soujanya N Jampala et al.
Journal of agricultural and food chemistry, 53(9), 3618-3625 (2005-04-28)
The structure and rheological properties of xanthan gum (XG) modified in a cold plasma environment were investigated. XG was functionalized in a capacitively coupled 13.56-MHz radio frequency dichlorosilane (DS)-plasma conditions and, consecutively, in situ aminated by ethylenediamine. The surface structure