grade
electronic grade
vapor density
1.1 (vs air)
assay
≥99.998%
form
gas
resistivity
>1000 Ω-cm
impurities
<1 ppm Carbon dioxide (CO2), <1 ppm Carbon monoxide (CO), <1 ppm Chlorosilanes, <1 ppm THC, <1 ppm Trisilane (Si3H8), <1 ppm Water (H2O), <100 ppm Hydrogen (H2), <2 ppm Nitrogen (N2), <2 ppm Siloxanes, <5 ppm Disilane (Si2H6)
bp
−112 °C (lit.)
mp
−185 °C (lit.)
transition temp
critical temperature −3.4 °C
density
1.114 g/mL at 25 °C (lit.)
SMILES string
[SiH4]
Application
将硅烷用于无定形硅、外延硅和硅基电介质的沉积。可利用 SiH4-SiF2-H2 气体混合物通过远程等离子体化学气相沉积 (RPCVD) 在硅晶片和玻璃基底上沉积多晶薄膜。硅烷在形成 III-IV 半导体材料时广泛用作掺杂剂。
Other Notes
建议使用不锈钢调节器 Z527416 或 Z527424。
存储类别
2A - Gases
signalword
Danger
hcodes
Hazard Classifications
Flam. Gas 1A - Press. Gas Compr. Gas
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)
法规信息
新产品
此项目有
Hu, C. C.
Thin Solid Films, 288, 147-147 (1996)
Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4?SiH4?H2
Jin Jang
Thin Solid Films, 289, 227-227 (1996)
Quinn, L.J.
Thin Solid Films, 296, 7-7 (1997)
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