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Merck
CN

357065

Sigma-Aldrich

wire, diam. 2.0 mm, 99.995% trace metals basis

别名:

Indium element

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关于此项目

经验公式(希尔记法):
In
CAS Number:
分子量:
114.82
EC 号:
MDL编号:
UNSPSC代码:
12141719
PubChem化学物质编号:
NACRES:
NA.23
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蒸汽压

<0.01 mmHg ( 25 °C)

质量水平

方案

99.995% trace metals basis

表单

wire

电阻率

8.37 μΩ-cm

直径

2.0 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES字符串

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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制备说明

4.5g = 20cm;22.5g = 100cm

象形图

Health hazard

警示用语:

Danger

危险声明

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves

法规信息

新产品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the

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