366870
Indium phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
别名:
Indium monophosphide, Indium phosphide, Indium(III) phosphide
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关于此项目
线性分子式:
InP
化学文摘社编号:
分子量:
145.79
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
244-959-5
MDL number:
产品名称
磷化铟(III), pieces, 3-20 mesh, 99.998% trace metals basis
Quality Level
assay
99.998% trace metals basis
form
pieces
reaction suitability
reagent type: catalyst
core: indium
particle size
3-20 mesh
SMILES string
P#[In]
InChI
1S/In.P
InChI key
GPXJNWSHGFTCBW-UHFFFAOYSA-N
signalword
Danger
hcodes
pcodes
Hazard Classifications
Carc. 1B - Repr. 2 - STOT RE 1
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Wenyong Liu et al.
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface
Hidetaka Asoh et al.
Nanotechnology, 23(21), 215304-215304 (2012-05-04)
To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 366870-1G | 04061831826685 |