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Merck
CN

366870

Sigma-Aldrich

Indium phosphide

pieces, 3-20 mesh, 99.998% trace metals basis

别名:

Indium monophosphide, Indium phosphide, Indium(III) phosphide

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关于此项目

线性分子式:
InP
化学文摘社编号:
分子量:
145.79
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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产品名称

磷化铟(III), pieces, 3-20 mesh, 99.998% trace metals basis

质量水平

方案

99.998% trace metals basis

表单

pieces

反应适用性

reagent type: catalyst
core: indium

粒径

3-20 mesh

SMILES字符串

P#[In]

InChI

1S/In.P

InChI key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

象形图

Health hazard

警示用语:

Danger

危险声明

预防措施声明

危险分类

Carc. 1B - Repr. 2 - STOT RE 1

储存分类代码

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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P J Poole et al.
Nanotechnology, 23(38), 385205-385205 (2012-09-06)
The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found
Chris Graham et al.
Optics express, 20(24), 26696-26703 (2012-11-29)
An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping
Martin Hjort et al.
ACS nano, 6(11), 9679-9689 (2012-10-16)
Using both synchrotron-based photoemission electron microscopy/spectroscopy and scanning tunneling microscopy/spectroscopy, we obtain a complete picture of the surface composition, morphology, and electronic structure of InP nanowires. Characterization is done at all relevant length scales from micrometer to nanometer. We investigate
Lorenzo Romeo et al.
Nano letters, 12(9), 4490-4494 (2012-08-02)
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated. Two lateral-gate electrodes patterned on opposite sides of an InAs/InP nanowire are used to apply a transverse electric field and tune orbital energy separation down to level-pair degeneracy. Transport
Wenyong Liu et al.
Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27)
In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface

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