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Merck
CN

367168

Sigma-Aldrich

硫化锡(II)

96%

别名:

单硫化锡, 硫化亚锡, 硫化高锡

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关于此项目

经验公式(希尔记法):
SSn
化学文摘社编号:
分子量:
150.78
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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方案

96%

密度

5.22 g/mL at 25 °C (lit.)

应用

battery manufacturing

SMILES字符串

S=[SnH2]

InChI

1S/S.Sn

InChI key

AFNRRBXCCXDRPS-UHFFFAOYSA-N

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储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Zhanjun Yang et al.
Biosensors & bioelectronics, 26(11), 4337-4341 (2011-05-20)
A novel biosensor is developed based on immobilization of proteins on nanoflake-like SnS₂ modified glass carbon electrode (GCE). With glucose oxidase (GOD) as a model, direct electrochemistry of the GOD/nanoflake-like SnS₂ is studied. The prepared SnS₂ has large surface area
Tetrahedral zinc blende tin sulfide nano- and microcrystals.
Eric C Greyson et al.
Small (Weinheim an der Bergstrasse, Germany), 2(3), 368-371 (2006-12-29)
Hyunju Chang et al.
The journal of physical chemistry. B, 109(1), 30-32 (2006-07-21)
First principles calculations are used to predict the stability and electronic structures of SnS(2) nanotubes. Optimization of several structures and their corresponding strain energies confirm the stability of SnS(2) nanotube structures. Band structure calculations show that SnS(2) nanotubes could have
Shannon C Riha et al.
ACS applied materials & interfaces, 3(1), 58-66 (2011-01-05)
Cu₂ZnSnS₄ (CZTS) nanocrystals, synthesized by a hot injection solution method, have been fabricated into thin films by dip-casting onto fluorine doped tin oxide (FTO) substrates. The photoresponse of the CZTS nanocrystal films was evaluated using absorbance measurements along with photoelectrochemical
Debtanu De et al.
Nanotechnology, 24(2), 025202-025202 (2012-12-15)
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a

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