40253
盐酸
fuming 37%, 37-38%
登录 查看组织和合同定价。
选择尺寸
变更视图
关于此项目
经验公式（希尔记法）:
HCl
化学文摘社编号:
分子量:
36.46
EC Number:
231-595-7
UNSPSC Code:
12352301
PubChem Substance ID:
Beilstein/REAXYS Number:
1098214
MDL number:
Assay:
37-38%
Concentration:
30-50%
vapor density
1.3 (vs air)
vapor pressure
3.23 psi ( 21.1 °C), 7.93 psi ( 37.7 °C)
assay
37-38%
CofA
specification on request
concentration
30-50%
color
light yellow
bp
>100 °C (lit.)
solubility
H2O: soluble
density
1.18 g/mL at 20 °C
SMILES string
Cl
InChI
1S/ClH/h1H
InChI key
VEXZGXHMUGYJMC-UHFFFAOYSA-N
General description
Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. It′s efficiency as a microabrasive was studied.
Application
Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).
Still not finding the right product?
Explore all of our products under 盐酸
signalword
Danger
hcodes
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3
target_organs
Respiratory system
存储类别
8B - Non-combustible corrosive hazardous materials
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
新产品
此项目有
Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)