grade
electronic grade
vapor density
1.53 (−142 °C, vs air)
assay
≥99.997%
form
gas
impurities
<0.5 ppm Oxygen (O2), <1 ppm Carbon monoxide + Trigermane (CO+Ge3H8), <1 ppm THC, <1 ppm Water (H2O), <2 ppm Carbon dioxide (CO2), <2 ppm Nitrogen (N2), <20 ppm Digermane (Ge2H6), <5 ppm Chlorogermanes, <5 ppm Germoxanes, <50 ppm Hydrogen (H2)
bp
−88.4 °C (lit.)
mp
−165 °C (lit.)
transition temp
critical temperature 35 °C
SMILES string
[GeH4]
InChI
1S/GeH4/h1H4
InChI key
QUZPNFFHZPRKJD-UHFFFAOYSA-N
Features and Benefits
锗烷气用于外延 和无定形硅锗合金层的沉积,以用于制造包括光伏电池和集成电路 (IC) 在内的高性能器件。通过化学气相沉积 (CVD) 和分子束外延 (MBE) 形成含锗薄膜时的前体。碳化锗半导体膜的 CVD 前体。
Other Notes
建议使用不锈钢调节器 Z527416 或 Z527424。
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 2 Inhalation - Acute Tox. 4 Oral - Flam. Gas 1A - Press. Gas Compr. Gas
存储类别
2A - Gases
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)


