521574
磷化镓
99.99% trace metals basis
登录查看公司和协议定价
选择尺寸
关于此项目
线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
方案
99.99% trace metals basis
表单
chunks
SMILES字符串
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
正在寻找类似产品? 访问 产品对比指南
警示用语:
Warning
危险声明
危险分类
Eye Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
11 - Combustible Solids
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
Marcel A Verheijen et al.
Nano letters, 7(10), 3051-3055 (2007-09-25)
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be
A Fakhr et al.
Nanotechnology, 21(16), 165601-165601 (2010-03-30)
InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size
Maik Behrendt et al.
Nanomedicine (London, England), 4(7), 747-761 (2009-10-21)
To assess the effects of oleic acid treatment on subcellular distribution of indium gallium phosphide-zinc sulfide (InGaP/ZnS) nanoparticles in microglia and astrocytes. The extent of colocalization between the nanoparticles and organelles was assessed by confocal microscopy, spectrofluorometry and cell sorting.
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持