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Merck
CN

521574

磷化镓

99.99% trace metals basis

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关于此项目

线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
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assay

99.99% trace metals basis

form

chunks

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N



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pictograms

Exclamation mark

signalword

Warning

hcodes

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

11 - Combustible Solids

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

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分析证书(COA)

Lot/Batch Number

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Marcel A Verheijen et al.
Nano letters, 7(10), 3051-3055 (2007-09-25)
We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and V/III precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be
A Fakhr et al.
Nanotechnology, 21(16), 165601-165601 (2010-03-30)
InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these



全球贸易项目编号

货号GTIN
521574-2G04061833598887