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线性分子式:
SrTiO3
化学文摘社编号:
分子量:
183.49
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
质量水平
表单
crystalline (cubic (a=3.905 Å))
介电常数
~300
硬度
6 (, Mohs)
反应适用性
reagent type: catalyst
core: titanium
尺寸
10 mm × 10 mm × 0.5 mm
mp
2060 °C (lit.)
2080 °C
密度
4.81 g/mL at 25 °C (lit.)
5.175 g/mL at 25 °C
半导体性质
<100>
SMILES字符串
[Sr++].[O-][Ti]([O-])=O
InChI
1S/3O.Sr.Ti/q;2*-1;+2;
InChI key
VEALVRVVWBQVSL-UHFFFAOYSA-N
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一般描述
损耗角正切 @10GHz: ~5 x 10-4 @ 300K, ~3 x 10-4 @ 77K; 热膨胀:10.4 (x 10-6/°C)
外形
cubic (a = 3.905 Å)
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
Claudia Cantoni et al.
Advanced materials (Deerfield Beach, Fla.), 24(29), 3952-3957 (2012-06-20)
Using state-of-the-art, aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for an intrinsic electronic reconstruction at the LAO/STO interface is shown. Simultaneous measurements of interfacial electron density and system polarization are crucial
Dong Hun Kim et al.
ACS combinatorial science, 14(3), 179-190 (2012-02-23)
Combinatorial pulsed laser deposition (CPLD) using two targets was used to produce a range of transition metal-substituted perovskite-structured Sr(Ti(1-x)M(x))O(3-δ) films on buffered silicon substrates, where M = Fe, Cr, Ni and Mn and x = 0.05-0.5. CPLD produced samples whose
S A Pauli et al.
Physical review letters, 106(3), 036101-036101 (2011-03-17)
The evolution of the atomic structure of LaAlO_{3} grown on SrTiO_{3} was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions
L Avilés Félix et al.
Nanotechnology, 23(49), 495715-495715 (2012-11-17)
The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was
Qiang Xu et al.
Ultramicroscopy, 111(7), 912-919 (2011-06-15)
The knowledge of the valence electron distribution is essential for understanding the properties of materials. However this information is difficult to obtain from HREM images because it is easily obscured by the large scattering contribution of core electrons and by
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