647810
硅
wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
别名:
Silicon element
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关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
UNSPSC Code:
12352300
PubChem Substance ID:
EC Number:
231-130-8
MDL number:
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
phosphorus as dopant
diam. × thickness
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<111>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm
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存储类别
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
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Technical Bulletins
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image