651486
砷化镓
(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium monoarsenide
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关于此项目
线性分子式:
GaAs
化学文摘社编号:
分子量:
144.64
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
215-114-8
MDL number:
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
InChI
1S/As.Ga
SMILES string
[Ga]#[As]
form
(single crystal substrate)
resistivity
≥1E7 Ω-cm
diam. × thickness
2 in. × 0.5 mm
density
5.31 g/mL at 25 °C (lit.)
semiconductor properties
<100>
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General description
未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1
Physical form
cubic (a = 5.6533 Å)
signalword
Danger
hcodes
Hazard Classifications
Carc. 1B - Repr. 1B - STOT RE 1
target_organs
Respiratory system,hematopoietic system
存储类别
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
法规信息
危险化学品
此项目有
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
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