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Merck
CN

651486

砷化镓

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

别名:

Gallium monoarsenide

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关于此项目

线性分子式:
GaAs
化学文摘社编号:
1303-00-0
分子量:
144.64
NACRES:
NA.23
PubChem Substance ID:
24883832
UNSPSC Code:
12352300
EC Number:
215-114-8
MDL number:
MFCD00011017

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产品名称

砷化镓, (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

InChI

1S/As.Ga

SMILES string

[Ga]#[As]

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

Quality Level

100

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相关类别

General description

未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1

Physical form

cubic (a = 5.6533 Å)

pictograms

Health hazard
GHS08

signalword

Danger

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

target_organs

Respiratory system,hematopoietic system

存储类别

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

法规信息

危险化学品
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历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
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