651486
砷化镓
(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm
别名:
Gallium monoarsenide
质量水平
表单
(single crystal substrate)
电阻率
≥1E7 Ω-cm
直径× 厚度
2 in. × 0.5 mm
密度
5.31 g/mL at 25 °C (lit.)
半导体性质
<100>
SMILES字符串
[Ga]#[As]
InChI
1S/As.Ga
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
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一般描述
未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1
外形
cubic (a = 5.6533 Å)
警示用语：
Danger
危险声明
危险分类
Carc. 1B - Repr. 1B - STOT RE 1
靶器官
Respiratory system,hematopoietic system
储存分类代码
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
危险化学品
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
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实验方案
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