Merck
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安全信息

651486

Sigma-Aldrich

砷化镓

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

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别名:
Gallium monoarsenide
线性分子式:
GaAs
CAS号:
1303-00-0
分子量:
144.64
EC 号:
215-114-8
MDL编号:
MFCD00011017
PubChem化学物质编号:
24883832
NACRES:
NA.23

质量水平

100

形式

(single crystal substrate)

电阻率

≥1E7 Ω-cm

直径× 厚度

2 in. × 0.5 mm

密度

5.31 g/mL at 25 °C (lit.)

半导体性质

<100>

SMILES string

[Ga]#[As]

InChI

1S/As.Ga

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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相关类别

物理属性

未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1

外形

cubic (a = 5.6533 Å)

象形图

Health hazard
GHS08

警示用语：

Danger

危险分类

Carc. 1B - Repr. 1B - STOT RE 1

储存分类代码

6.1A - Combustible, acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

法规信息

危险化学品

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Brandon J Beberwyck et al.
Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30)
III-V nanocrystals displaying high crystallinity and low size dispersity are difficult to access by direct synthesis from molecular precursors. Here, we demonstrate that cation exchange of cadmium pnictide nanocrystals with group 13 ions yields monodisperse, crystalline III-V nanocrystals, including GaAs
Yuttapoom Puttisong et al.
Advanced materials (Deerfield Beach, Fla.), 25(5), 738-742 (2012-10-31)
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for
Andrew Lee et al.
Optics express, 20(20), 22181-22187 (2012-10-06)
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
V V Solovyev et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28)
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies
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