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Merck
CN

651486

砷化镓

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

别名:

Gallium monoarsenide

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关于此项目

线性分子式:
GaAs
化学文摘社编号:
1303-00-0
分子量:
144.64
NACRES:
NA.23
PubChem Substance ID:
24883832
UNSPSC Code:
12352300
EC Number:
215-114-8
MDL number:
MFCD00011017

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产品名称

砷化镓, (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

InChI

1S/As.Ga

SMILES string

[Ga]#[As]

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

Quality Level

100

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相关类别

General description

未掺杂的（Si 型半导体），蚀坑密度 <5×104cm-2，生长技术为液封直拉法和水平布里奇曼法
迁移率 ≥4500cm2 · V-1 · S-1

Physical form

cubic (a = 5.6533 Å)

pictograms

Health hazard
GHS08

signalword

Danger

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

target_organs

Respiratory system,hematopoietic system

存储类别

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

法规信息

危险化学品
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历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
Brandon J Beberwyck et al.
Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30)
III-V nanocrystals displaying high crystallinity and low size dispersity are difficult to access by direct synthesis from molecular precursors. Here, we demonstrate that cation exchange of cadmium pnictide nanocrystals with group 13 ions yields monodisperse, crystalline III-V nanocrystals, including GaAs
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