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Merck
CN
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文件

685070

Sigma-Aldrich

聚[(9,9-二辛基芴基-2,7-二基)-co-并噻吩]

99.9%

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别名:
F8T2, 聚(9,9-二辛基芴-alt-并噻吩), 聚[[2,2′-并噻吩]-5,5′-二基(9,9-二辛基-9H-芴-2,7-二基)]
线性分子式:
(C37H44S2)n(C8H9)2
CAS号:
210347-56-1
UNSPSC代码:
12352103
NACRES:
NA.23

质量水平

100

检测方案

99.9%

形式

powder

分子量

average Mn >20,000

荧光

λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)

半导体性质

P-type (mobility=5×10−3 cm2/V·s)

相关类别

一般描述

F8T2是一种氟化半导体聚合物，可用作具有0.02cm2V-1s-1迁移率的一种空穴传输层。它在真空和紫外线环境中非常稳定。它的液晶性使其能够在有机薄膜上形成一种自组装纳米结构。
通常可溶于THF、二氯甲烷或甲苯。（c = 1％，外观通常可能是混浊的）。
聚合物是用3,5-二甲基苯封端的。

应用

F8T2主要用于制造光电子和基于能量装置的活动层，如有机场效应晶体管（OFET）、太阳能电池、发光二极管（LED）和电子气体传感器。

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

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Photovoltaic properties and charge dynamics in nanophase-separated F8T2/PCBM blend films.
Yasuda T, et al.
J. Photopolym. Sci. Technol., 25(3), 271-276 (2012)
Structural ordering in F8T2 polyfluorene thin film transistors.
Organic Field Effect Transistors II, 5217, 35-43 (2003)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
Accelerating gas adsorption on 3D percolating carbon nanotubes.
Li H, et al.
Scientific Reports, 6(13), 21313-21313 (2016)
Organic/inorganic F8T2/GaN light emitting heterojunction.
Wu YJ, et al.
Organic Electronics, 49(3), 64-68 (2017)
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