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685070

聚[(9,9-二辛基芴基-2,7-二基)-co-并噻吩]

greener alternative

99.9%

别名:

F8T2, 聚(9,9-二辛基芴-alt-并噻吩), 聚[[2,2′-并噻吩]-5,5′-二基(9,9-二辛基-9H-芴-2,7-二基)]

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关于此项目

线性分子式:
(C37H44S2)n(C8H9)2
化学文摘社编号:
210347-56-1
NACRES:
NA.23
UNSPSC Code:
12352103
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Quality Level

100

assay

99.9%

form

powder

mol wt

average Mn >20,000

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

fluorescence

λex 400 nm; λem 497 nm in chloroform (at Mn = 20,000)

greener alternative category

Enabling

semiconductor properties

P-type (mobility=5×10−3 cm2/V·s)

General description

F8T2是一种氟化半导体聚合物，可用作具有0.02cm2V-1s-1迁移率的一种空穴传输层。它在真空和紫外线环境中非常稳定。它的液晶性使其能够在有机薄膜上形成一种自组装纳米结构。
We are committed to bringing you Greener Alternative Products that adhere to one of the four categories of Greener Alternatives. This is an enabling product that promotes power conversion efficiency in organic photovoltaics, significantly enhancing energy efficiency in solar energy applications. Click here for more information.
通常可溶于THF、二氯甲烷或甲苯。（c = 1％，外观通常可能是混浊的）。
聚合物是用3,5-二甲基苯封端的。

Application

F8T2主要用于制造光电子和基于能量装置的活动层，如有机场效应晶体管（OFET）、太阳能电池、发光二极管（LED）和电子气体传感器。

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCH8125
MKCF5237
MKBB6433
MKBF2846
MKBB4472

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Photovoltaic properties and charge dynamics in nanophase-separated F8T2/PCBM blend films.
Yasuda T, et al.
J. Photopolym. Sci. Technol., 25(3), 271-276 (2012)
Structural ordering in F8T2 polyfluorene thin film transistors.
Organic Field Effect Transistors II, 5217, 35-43 (2003)
Natalie Stutzmann et al.
Science (New York, N.Y.), 299(5614), 1881-1884 (2003-03-22)
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar
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全球贸易项目编号

货号GTIN
685070-250MG04061832987194