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725544

四(乙基甲基胺基)铪(IV)

Name: 四(乙基甲基胺基)铪(IV)
Brand: ALDRICH

packaged for use in deposition systems

别名:

TEMAH, 四(乙基甲基氨基)铪(IV)

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关于此项目

线性分子式:

[(CH₃)(C₂H₅)N]₄Hf

化学文摘社编号:

352535-01-4

分子量:

410.90

NACRES:

NA.23

PubChem Substance ID:

329764168

UNSPSC Code:

12352103

MDL number:

MFCD03427130

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属性

form

liquid

reaction suitability

core: hafnium, reagent type: catalyst

bp

78 °C/0.01 mmHg (lit.)

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

说明

General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Application

TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO₂) and hafnium zirconium oxide (Hf₁-xZrxO₂), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS₂. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Precursors Packaged for Depositions Systems

Features and Benefits

This TEMAH is packaged in a SWAGELOK stainless-steeldeposition system convenient for connecting to ALD systems.

Steel cylinder connected to 316 stainless steelball-valve
1/4 inch male SWAGELOK VCR connections

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pictograms

GHS02,GHS05,GHS07

signalword

Danger

hcodes

H225,H260,H302,H314,H335

pcodes

P210 - P231 + P232 - P280 - P301 + P312 - P303 + P361 + P353 - P305 + P351 + P338

target_organs

Respiratory system

supp_hazards

EUH014

存储类别

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk

WGK 3

flash_point_f

51.8 °F - closed cup

flash_point_c

11 °C - closed cup

Hazard Classifications

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react. 1

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We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water

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全球贸易项目编号

货号	GTIN
725544-10G	04061833607527