760463
叔丁醇铪
packaged for use in deposition systems
别名:
Hafnium tetra-t -butoxide, Hafnium tetrakis(t -butoxide), Tetra-t -butoxyhafnium, Tetrakis(t -butoxy)hafnium
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关于此项目
线性分子式:
Hf[OC(CH3)3]4
化学文摘社编号:
分子量:
470.94
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
InChI
1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
SMILES string
CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChI key
WZVIPWQGBBCHJP-UHFFFAOYSA-N
reaction suitability
core: hafnium
refractive index
n20/D 1.424 (lit.)
bp
90 °C/5 mmHg (lit.)
density
1.166 g/mL at 25 °C (lit.)
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Application
Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
3 - Flammable liquids
wgk
WGK 3
flash_point_f
82.4 °F - closed cup
flash_point_c
28 °C - closed cup
法规信息
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此项目有
Dabrian, A.; et al.
Crystal Growth & Design, 11, 203-203 (2011)
Williams, P. A.; et al
Journal of Materials Chemistry, 12, 165-165 (2002)
Sean W Depner et al.
ACS nano, 8(5), 4678-4688 (2014-04-23)
We demonstrate that the degree of branching of the alkyl (R) chain in a Hf(OR)4 precursor allows for control over the length of HfO2 nanocrystals grown by homocondensation of the metal alkoxide with a metal halide. An extended nonhydrolytic sol-gel
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