760463
叔丁醇铪
packaged for use in deposition systems
别名:
Hafnium tetra-t -butoxide, Hafnium tetrakis(t -butoxide), Tetra-t -butoxyhafnium, Tetrakis(t -butoxy)hafnium
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关于此项目
线性分子式:
Hf[OC(CH3)3]4
化学文摘社编号:
分子量:
470.94
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
表单
liquid
反应适用性
core: hafnium
折射率
n20/D 1.424 (lit.)
沸点
90 °C/5 mmHg (lit.)
密度
1.166 g/mL at 25 °C (lit.)
SMILES字符串
CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C
InChI
1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
InChI key
WZVIPWQGBBCHJP-UHFFFAOYSA-N
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应用
Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.
警示用语：
Warning
危险分类
Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
3 - Flammable liquids
WGK
WGK 3
闪点(°F)
82.4 °F - closed cup
闪点(°C)
28 °C - closed cup
法规信息
新产品
此项目有
Williams, P. A.; et al
Journal of Materials Chemistry, 12, 165-165 (2002)
Dabrian, A.; et al.
Crystal Growth & Design, 11, 203-203 (2011)
Sean W Depner et al.
ACS nano, 8(5), 4678-4688 (2014-04-23)
We demonstrate that the degree of branching of the alkyl (R) chain in a Hf(OR)4 precursor allows for control over the length of HfO2 nanocrystals grown by homocondensation of the metal alkoxide with a metal halide. An extended nonhydrolytic sol-gel
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