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Merck
CN

761443

1,3,6,8(2H,7H)-四酮, 2,7-二环己基苯并[lmn][3,8]菲咯啉

98%

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经验公式(希尔记法):
C26H26N2O4
化学文摘社编号:
分子量:
430.50
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
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InChI

1S/C26H26N2O4/c29-23-17-11-13-19-22-20(26(32)28(25(19)31)16-9-5-2-6-10-16)14-12-18(21(17)22)24(30)27(23)15-7-3-1-4-8-15/h11-16H,1-10H2

SMILES string

O=C1N(C2CCCCC2)C(=O)c3ccc4C(=O)N(C5CCCCC5)C(=O)c6ccc1c3c46

InChI key

XWDVNWORIROXKG-UHFFFAOYSA-N

assay

98%

form

solid

mp

360-365 °C

λmax

382, 362, 243 nm in chloroform

semiconductor properties

N-type (mobility=6 cm2/V·s)

General description

1,3,6,8(2H,7H)-四酮, 2,7-二环己基苯并[lmn][3,8]菲咯啉(NDI-cy6)是一种基于萘二酰亚胺的聚合物半导体材料。它可形成一个n型导电层,从而促成了电子迁移率为12 cm2V-1s-1的共轭体系。

Application

NDI-cy6可作为电子传输层用于开发包括有机场效应晶体管(OFET)和薄膜晶体管(TFT)在内的有机电子器件。

Features and Benefits

良好的热稳定性和低电子注入能障。当从各向同性相冷却时,它们表现为近晶相,并且介晶在层内呈柱状排列。

pictograms

Environment

signalword

Warning

hcodes

Hazard Classifications

Aquatic Acute 1

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors
Deepak Shukla, et al.
Chemistry of Materials, 20, 7486-7491 (2008)
Thin-film morphology control in naphthalene-diimide-based semiconductors: high mobility n-type semiconductor for organic thin-film transistors
Shukla D, et al.
Chemistry of Materials, 20(24), 7486-7491 (2008)
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Rolin C, et al.
Nature Communications, 8, 14975-14975 (2017)
Toward quantitative prediction of charge mobility in organic semiconductors: tunneling enabled hopping model
Geng H, et al.
Advanced Materials, 24(26), 3568-3572 (2012)
Rapid Evaluation of Electron Mobilities at Semiconductor-Insulator Interfaces in an Ambient Atmosphere by a Contactless Microwave-Based Technique
Inoue J, et al.
ACS Omega, 2(1), 164-170 (2017)

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