跳转至内容
Merck
CN

761443

Sigma-Aldrich

1,3,6,8(2H,7H)-四酮, 2,7-二环己基苯并[lmn][3,8]菲咯啉

98%

登录查看公司和协议定价

选择尺寸


关于此项目

经验公式(希尔记法):
C26H26N2O4
化学文摘社编号:
分子量:
430.50
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
技术服务
需要帮助?我们经验丰富的科学家团队随时乐意为您服务。
让我们为您提供帮助
技术服务
需要帮助?我们经验丰富的科学家团队随时乐意为您服务。
让我们为您提供帮助

方案

98%

表单

solid

mp

360-365 °C

λmax

382, 362, 243 nm in chloroform

半导体性质

N-type (mobility=6 cm2/V·s)

SMILES字符串

O=C1N(C2CCCCC2)C(=O)c3ccc4C(=O)N(C5CCCCC5)C(=O)c6ccc1c3c46

InChI

1S/C26H26N2O4/c29-23-17-11-13-19-22-20(26(32)28(25(19)31)16-9-5-2-6-10-16)14-12-18(21(17)22)24(30)27(23)15-7-3-1-4-8-15/h11-16H,1-10H2

InChI key

XWDVNWORIROXKG-UHFFFAOYSA-N

一般描述

1,3,6,8(2H,7H)-四酮, 2,7-二环己基苯并[lmn][3,8]菲咯啉(NDI-cy6)是一种基于萘二酰亚胺的聚合物半导体材料。它可形成一个n型导电层,从而促成了电子迁移率为12 cm2V-1s-1的共轭体系。

应用

NDI-cy6可作为电子传输层用于开发包括有机场效应晶体管(OFET)和薄膜晶体管(TFT)在内的有机电子器件。

特点和优势

良好的热稳定性和低电子注入能障。当从各向同性相冷却时,它们表现为近晶相,并且介晶在层内呈柱状排列。

象形图

Environment

警示用语:

Warning

危险声明

预防措施声明

危险分类

Aquatic Acute 1

储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

没有发现合适的版本?

如果您需要特殊版本,可通过批号或批次号查找具体证书。

已有该产品?

在文件库中查找您最近购买产品的文档。

访问文档库

Rapid Evaluation of Electron Mobilities at Semiconductor-Insulator Interfaces in an Ambient Atmosphere by a Contactless Microwave-Based Technique
Inoue J, et al.
ACS Omega, 2(1), 164-170 (2017)
Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors
Deepak Shukla, et al.
Chemistry of Materials, 20, 7486-7491 (2008)
Thin-film morphology control in naphthalene-diimide-based semiconductors: high mobility n-type semiconductor for organic thin-film transistors
Shukla D, et al.
Chemistry of Materials, 20(24), 7486-7491 (2008)
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Rolin C, et al.
Nature Communications, 8, 14975-14975 (2017)
Toward quantitative prediction of charge mobility in organic semiconductors: tunneling enabled hopping model
Geng H, et al.
Advanced Materials, 24(26), 3568-3572 (2012)

商品

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.

我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.

联系客户支持