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InChI key
IIKSFQIOFHBWSO-UHFFFAOYSA-N
InChI
1S/C40H26N2O4/c43-37-29-15-11-25-27-13-17-31-36-32(40(46)42(39(31)45)22-20-24-9-5-2-6-10-24)18-14-28(34(27)36)26-12-16-30(35(29)33(25)26)38(44)41(37)21-19-23-7-3-1-4-8-23/h1-18H,19-22H2
SMILES string
O=C1N(CCc2ccccc2)C(=O)c3ccc4c5ccc6C(=O)N(CCc7ccccc7)C(=O)c8ccc(c9ccc1c3c49)c5c68
assay
98% (elemental analysis)
form
solid
mp
415-420 °C
semiconductor properties
N-type (mobility=1.4 cm2/V·s)
General description
Application
Features and Benefits
存储类别
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
商品
Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.
Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.
Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.
Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
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