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关于此项目
InChI
1S/C36H34N2O4/c1-3-5-7-9-19-37-33(39)25-15-11-21-23-13-17-27-32-28(36(42)38(35(27)41)20-10-8-6-4-2)18-14-24(30(23)32)22-12-16-26(34(37)40)31(25)29(21)22/h11-18H,3-10,19-20H2,1-2H3
SMILES string
CCCCCCN1C(=O)c2ccc3c4ccc5C(=O)N(CCCCCC)C(=O)c6ccc(c7ccc(C1=O)c2c37)c4c56
InChI key
DAMUEXRCHXVMQS-UHFFFAOYSA-N
assay
98%
form
powder
mp
>360 °C (lit)
λmax
524, 448, 229 nm in dichloromethane
semiconductor properties
N-type (mobility=0.1-2.1 cm2/V·s)
Application
- High electron transporting character
- Perylenebis(dicarboximide)s (PDIs) can be used as n-type materials for organic fieldeffect transistors (OFETs)
- Good optical properties
- Suitable for use in solution-processed organic phototransistors (OPTs)
- Excellent candidate as an electron accepting building block for organic photovoltaics (OPVs)
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
商品
Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.
Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.
Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.
Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
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