跳转至内容
Merck
CN

778265

双(五甲基环戊二烯基)四氢呋喃钡加合物

别名:

1,2,3,4,5-Pentamethyl-1,3-cyclopentadiene barium complex, Bis(η5-pentamethylcyclopentadienyl)barium, Bis(1,2,3,4,5-pentamethyl-2,4-cyclopentadien-1-yl)barium

登录 查看组织和合同定价。

选择尺寸


关于此项目

线性分子式:
[Ba(C5(CH3)5)2] · 2(C4H8O)
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
技术服务
需要帮助?我们经验丰富的科学家团队随时乐意为您服务。
让我们为您提供帮助
技术服务
需要帮助?我们经验丰富的科学家团队随时乐意为您服务。
让我们为您提供帮助

SMILES string

C[C]1[C](C)[C]([C](C)[C]1C)C.C[C]2[C](C)[C](C)[C](C)[C]2C.C3CCOC3.C4CCOC4.[Ba]

InChI

1S/2C10H15.2C4H8O.Ba.2H/c2*1-6-7(2)9(4)10(5)8(6)3;2*1-2-4-5-3-1;;;/h2*1-5H3;2*1-4H2;;;

InChI key

LFDQXDVHCMWHSI-UHFFFAOYSA-N

form

solid

reaction suitability

core: barium

mp

>300 °C

Quality Level

Application

Cyclopentadienyl compounds of Barium are very commonly used ALD/CVD precursors for depositing Barium containing thin films; example BaTiO3, BaZrO3 films. Cyclopentadienyl groups form weaker bonds with Barium, but have stronger bonds within the ligand thus preventing carbon contamination of the films. Cyclopentadienyl precursors of barium sublime under reduced pressures, with tetrahydrofuran adducts showing volatility also under atmospheric pressure. The tetrahydrofuran adducts loose the coordinated THF when evaporated. Complexes with bulky cyclopentadienyl ligands are more thermally stable and volatile.
Barium containing thin films find applications as host lattices for luminescent materials; high temperature superconductors; high permittivity dielectrics and ferroelectrics.

pictograms

FlameSkull and crossbones

signalword

Danger

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Irrit. 2 - Flam. Sol. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

4.1B - Flammable solid hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

法规信息

新产品
此项目有

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

没有发现合适的版本?

如果您需要特殊版本,可通过批号或批次号查找具体证书。

已有该产品?

在文件库中查找您最近购买产品的文档。

访问文档库

Timothy P Holme et al.
The journal of physical chemistry. A, 111(33), 8147-8151 (2007-07-28)
A new selection method for atomic layer deposition (ALD) or chemical vapor deposition (CVD) precursors is proposed and tested. Density functional theory was used to simulate Sr and Ba precursors, and several precursors were selected and used to grow films
Vehkamaki; M.;
Electrochemical and Solid-State Letters, 2(10), 504-504 (1999)

我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.

联系客户支持