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Merck
CN

778265

Sigma-Aldrich

双(五甲基环戊二烯基)四氢呋喃钡加合物

别名:

1,2,3,4,5-Pentamethyl-1,3-cyclopentadiene barium complex, Bis(η5-pentamethylcyclopentadienyl)barium, Bis(1,2,3,4,5-pentamethyl-2,4-cyclopentadien-1-yl)barium

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关于此项目

线性分子式:
[Ba(C5(CH3)5)2] · 2(C4H8O)
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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表单

solid

反应适用性

core: barium

mp

>300 °C

SMILES字符串

C[C]1[C](C)[C]([C](C)[C]1C)C.C[C]2[C](C)[C](C)[C](C)[C]2C.C3CCOC3.C4CCOC4.[Ba]

InChI

1S/2C10H15.2C4H8O.Ba.2H/c2*1-6-7(2)9(4)10(5)8(6)3;2*1-2-4-5-3-1;;;/h2*1-5H3;2*1-4H2;;;

InChI key

LFDQXDVHCMWHSI-UHFFFAOYSA-N

应用

Cyclopentadienyl compounds of Barium are very commonly used ALD/CVD precursors for depositing Barium containing thin films; example BaTiO3, BaZrO3 films. Cyclopentadienyl groups form weaker bonds with Barium, but have stronger bonds within the ligand thus preventing carbon contamination of the films. Cyclopentadienyl precursors of barium sublime under reduced pressures, with tetrahydrofuran adducts showing volatility also under atmospheric pressure. The tetrahydrofuran adducts loose the coordinated THF when evaporated. Complexes with bulky cyclopentadienyl ligands are more thermally stable and volatile.
Barium containing thin films find applications as host lattices for luminescent materials; high temperature superconductors; high permittivity dielectrics and ferroelectrics.

象形图

FlameSkull and crossbones

警示用语:

Danger

危险分类

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Irrit. 2 - Flam. Sol. 2 - Skin Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

法规信息

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分析证书(COA)

Lot/Batch Number

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Timothy P Holme et al.
The journal of physical chemistry. A, 111(33), 8147-8151 (2007-07-28)
A new selection method for atomic layer deposition (ALD) or chemical vapor deposition (CVD) precursors is proposed and tested. Density functional theory was used to simulate Sr and Ba precursors, and several precursors were selected and used to grow films
Vehkamaki; M.;
Electrochemical and Solid-State Letters, 2(10), 504-504 (1999)

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