描述
Material Description: graphene monolayer (RAMAN)
Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
质量水平
一般描述
Graphene:
GFET device info:
- Graphene Growth Process: Atmospheric Pressure Chemical Vapor Deposition
- Graphene Growth substrate: Copper foil, 25 μ thick
- Transfer process: Wet electromechanical separation
- Graphene Thickness: Single Atomic Layer
- Sheet resistance on Si/SiO2: 900 ± 50 ohms/sq
- FET mobility on Al2O3: ∼3000 cm2/V sec
- FET mobility on Si/SiO2: ∼1500 cm2/V sec
- FET mobility using new experimental method with unwrinkled graphene on Si/SiO2: ∼7000 cm2/V sec
- Material uniformity: >95 % Single layer graphene
- Transparency: >97.4 %
GFET device info:
- GFET Device Dirac Voltage Range 0-60 V
- GFET Chip: 10 devices per chip
- Yield: 90 %
应用
- Chemical Sensors
- Biosensors
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
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