描述
Decomposition temperature: 371 °C (Decomposition start temperature)
mobility = 2.3 cm2 / Vs (@Vsd=100V)
on / off ratio = 107
Structure: BG-TC @ SiO2 / Si
electrode: Au
film: TU-3 / CHCl3 spin coat
方案
≥99% (HPLC)
表单
powder
分子量
897.33 g/mol
颜色
dark green
mp
291 °C
储存温度
2-8°C
应用
TU-3 is a n-type organic semiconductor material with long term (year-long) stability in air. And it can be deposited from its solutions to form felxible integrated circuits in either 2D or 3D configurations.
This material achieves a high electron mobility of 2.3 cm2/Vs or more in transistors, making it highly suitable for this application. The mobility of amorphous silicon used in general LCDs and other applications is about 0.5-1cm2/Vs.
This material achieves a high electron mobility of 2.3 cm2/Vs or more in transistors, making it highly suitable for this application. The mobility of amorphous silicon used in general LCDs and other applications is about 0.5-1cm2/Vs.
法律信息
Organic thin film transistor containing benzobis(thiadiazole) derivatives for organic electronic device by Tanaka, Yasuhiro; Kakita, Kazunari; Machida, Toshikazu From Jpn. Kokai Tokkyo Koho (2017), JP 2017079319 A 20170427.
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
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