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920924

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 200 mm (8 in.)

别名:

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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关于此项目

经验公式（希尔记法）:
BN
化学文摘社编号:
10043-11-5
分子量:
24.82
UNSPSC Code:
12352302
NACRES:
NA.23
MDL number:
MFCD00008279
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Quality Level

100

description

Bandgap: 5.97 eV, Metal Impurities: 1.00e10 – 5.00e10 (at/cm2), Monolayer h-BN, Orientation: <1-0-0>, Raman Peak: 1370 /cm-1, Substrate Type/Doping: P/B, hBN Coverage: 100% with sporadic adlayers

resistivity

5-30 Ω-cm

diam.

200 mm (8 in.)

thickness

300 nm , Oxide, 725 ± 25 μm , Wafer

grain size

>4 μm

SMILES string

B#N

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

Application

Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • nsulating/transparent coatings

Preparation Note

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

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存储类别

13 - Non Combustible Solids

wgk

WGK 3

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Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Ba K, et al.
Scientific Reports, 7 (2017)
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23) (2019)
Hexagonal boron nitride nanomechanical resonators with spatially visualized motion
Zheng X, et al
Microsystems & Nanoengineering (2017)
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货号GTIN
920924-1EA04065266281835