Quality Segment
description
Bandgap: 5.97 eV, Metal Impurities: 1.00e10 – 5.00e10 (at/cm2), Monolayer h-BN, Orientation: <1-0-0>, Raman Peak: 1370 /cm-1, Substrate Type/Doping: P/B, hBN Coverage: 100% with sporadic adlayers
resistivity
5-30 Ω-cm
diam.
200 mm (8 in.)
thickness
300 nm , Oxide, 725 ± 25 μm , Wafer
grain size
>4 μm
SMILES string
B#N
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
Application
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- nsulating/transparent coatings
Preparation Note
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
Still not finding the right product?
Explore all of our products under Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer
存储类别
13 - Non Combustible Solids
wgk
WGK 3