description
Bandgap: 5.97 eV, Metal Impurities: 1.00e10 – 5.00e10 (at/cm2), Orientation: <1-0-0>, Raman Peak: 1370 /cm-1, Substrate Type/Doping: P/B, hBN Coverage: 100% with sporadic adlayers, 1-25 Ω-cm
diam.
150 mm (6 in.)
size
300 nm , Oxide
thickness
675 ± 25 μm , Wafer
grain size
>4 μm
SMILES string
B#N
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
Application
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices †††
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings
Preparation Note
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
存储类别
13 - Non Combustible Solids
wgk
WGK 3
法规信息
新产品
此项目有
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23) (2019)
Hexagonal boron nitride nanomechanical resonators with spatially visualized motion
Zheng X, et al.
Microsystems & Nanoengineering, 3 (2017)
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Ba K, et al.
Scientific reports, 7 (2017)
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| 920940-1EA | 04065266281910 |