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关于此项目
经验公式(希尔记法):
Te
化学文摘社编号:
分子量:
127.60
EC Number:
236-813-4
UNSPSC Code:
12352300
MDL number:
InChI key
PORWMNRCUJJQNO-UHFFFAOYSA-N
InChI
1S/Te
SMILES string
[Te]
grade
puriss.
assay
≥99.999%
form
pieces
resistivity
5.8-33 μΩ-cm, 20°C
bp
990 °C (lit.)
mp
450 °C (lit.)
density
6.24 g/mL at 25 °C (lit.)
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signalword
Danger
Hazard Classifications
Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B
存储类别
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges
法规信息
新产品
此项目有
Hridyesh Kumar et al.
Carbohydrate polymers, 97(2), 327-334 (2013-08-06)
The present work describes synthesis of water soluble L-cysteine-functionalized CdTe quantum dots (QDs) with size tunable emission at different time intervals for chitosan based film. The characterization of the synthesized CdTe QDs-chitosan film was made by Fourier transform infrared (FTIR)
E C Stangherlin et al.
Toxicology, 207(2), 231-239 (2004-12-15)
The effect of single maternal subcutaneous (s.c.) injection of 0.12 mg/kg diphenyl ditelluride, (PhTe)2, diluted in canola oil at days 6, 10 or 17 of gestation were evaluated in Wistar rats. The reduction of body weight gain was statistically significant
Tonglei Cheng et al.
Optics express, 21(3), 3318-3323 (2013-03-14)
A simple all-solid tellurite microstructured optical fiber which has only one layer of high-index rods in the cladding is proposed and fabricated in the paper. The core and the cladding with the low index are made from the TeO(2)-ZnO-Na(2)O-La(2)O(3) glass
Katja C Nowack et al.
Nature materials, 12(9), 787-791 (2013-06-19)
The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of its band structure, and associated conducting edge channels. The QSH state was predicted and experimentally demonstrated to be realized in HgTe quantum wells.
Zhe Liu et al.
Optics express, 21(6), 7799-7810 (2013-04-03)
ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based
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