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关键词:'651486'
显示 1-30 共 32 条结果 关于 "651486" 范围 论文
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
Christopher J Blanton et al.
The Journal of chemical physics, 138(5), 054114-054114 (2013-02-15)
The effect of external electric field on electron-hole (eh) correlation in gallium arsenide quantum dots is investigated. The electron-hole Schrodinger equation in the presence of an external electric field is solved using explicitly correlated full configuration interaction method and accurate
E De Ranieri et al.
Nature materials, 12(9), 808-814 (2013-06-12)
The rich internal degrees of freedom of magnetic domain walls make them an attractive complement to electron charge for exploring new concepts of storage, transport and processing of information. Here we use the tunable internal structure of a domain wall
Shaoqiang Chen et al.
Optics express, 21(6), 7570-7576 (2013-04-03)
Gain-switched pulses of InGaAs double-quantum-well lasers fabricated from identical epitaxial laser wafers were measured under both current injection and optical pumping conditions. The shortest output pulse widths were nearly identical (about 40 ps) both for current injection and optical pumping;
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
Pengyu Fan et al.
Nano letters, 12(9), 4943-4947 (2012-08-29)
Over the past decade, the properties of plasmonic waveguides have extensively been studied as key elements in important applications that include biosensors, optical communication systems, quantum plasmonics, plasmonic logic, and quantum-cascade lasers. Whereas their guiding properties are by now fairly
Dean E Carter et al.
Toxicology and applied pharmacology, 193(3), 309-334 (2003-12-18)
The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Siwei Ma et al.
Nanoscale, 4(20), 6415-6418 (2012-09-07)
An excellent biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was used to detect lactic acid. Due to the new structure, addition of the Si-doped GaAs cap layer, the HEMT biosensor could detect a wide range of lactic
Ernst M Bomhard et al.
Critical reviews in toxicology, 43(5), 436-466 (2013-05-28)
Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was
[I System for control and data processing of GaAs linear array detector of the X-ray scanner].
S A Gorokhov et al.
Meditsinskaia tekhnika, (5)(5), 44-47 (2013-12-25)
Yi-Ting Wang et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 24(40), 405801-405801 (2012-09-13)
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density
Yeeu-Chang Lee et al.
Optics express, 21 Suppl 1, A36-A41 (2013-02-15)
In order to reduce surface reflection, anti-reflective (AR) coatings are widely used on the surfaces of solar cells to improve the efficiency of photoelectric conversion. This study employed colloidal lithography with a dry etching process to fabricate sub-micron anti-reflection structures
Yuttapoom Puttisong et al.
Advanced materials (Deerfield Beach, Fla.), 25(5), 738-742 (2012-10-31)
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for
G W Shu et al.
Optics express, 21 Suppl 1, A123-A130 (2013-02-15)
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
Akiyo Tanaka
Toxicology and applied pharmacology, 198(3), 405-411 (2004-07-28)
Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers
Andrew Lee et al.
Optics express, 20(20), 22181-22187 (2012-10-06)
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold
V V Solovyev et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28)
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies
John S Parker et al.
Optics express, 20(18), 19946-19955 (2012-10-06)
We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers
Yulian Cao et al.
Optics letters, 37(19), 4071-4073 (2012-10-03)
We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M(2) for the devices is almost unchanged as the light
Brandon J Beberwyck et al.
Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30)
III-V nanocrystals displaying high crystallinity and low size dispersity are difficult to access by direct synthesis from molecular precursors. Here, we demonstrate that cation exchange of cadmium pnictide nanocrystals with group 13 ions yields monodisperse, crystalline III-V nanocrystals, including GaAs
R J Harrison
Occupational medicine (Philadelphia, Pa.), 1(1), 49-58 (1986-01-01)
The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has
M Schmid et al.
Physical review letters, 111(18), 187201-187201 (2013-11-19)
Transverse magnetothermoelectric effects are studied in Permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiN(x) membranes. The transverse voltage along platinum strips patterned on top of the Permalloy films is measured versus
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
Michele Natrella et al.
Optics express, 20(17), 19279-19288 (2012-10-06)
We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices
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