CN
- Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.
Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.
Small (Weinheim an der Bergstrasse, Germany) (2014-11-05)
Zhengqing John Qi, Sung Ju Hong, Julio A Rodríguez-Manzo, Nicholas J Kybert, Rajatesh Gudibande, Marija Drndić, Yung Woo Park, A T Charlie Johnson
PMID25367876
摘要
CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.