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Merck
CN

393541

乙酰丙酮镓(III)

99.99% trace metals basis

别名:

2,4-戊二酮酸镓(III), Ga(acac)3

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关于此项目

线性分子式:
[CH3COCH=C(O-)CH3]3Ga
化学文摘社编号:
分子量:
367.05
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
238-377-0
MDL number:
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assay

99.99% trace metals basis

form

solid

reaction suitability

core: gallium, reagent type: catalyst

mp

196-198 °C (dec.) (lit.)

SMILES string

CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O

InChI

1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;

InChI key

ZVYYAYJIGYODSD-LNTINUHCSA-K

General description

Gallium(III) acetylacetonate is a white to off-white crystalline solid with purity (99.99% trace metals basis) widely used as a precursor for thin films and nanomaterials. It is soluble in organic solvents such as ethanol, acetone, and toluene, making it suitable for solution-based nanoparticle synthesis. Its thermal stability, with decomposition occurring above ~200 °C, allows for controlled gallium release, making it ideal for the synthesis of nanomaterials and oxide layers. It is commonly employed in metal-organic chemical vapor deposition (CVD) and atomic layer deposition (ALD) to produce gallium oxide (Ga₂O₃) and gallium nitride (GaN) thin films, which are essential for electronic and optoelectronic applications.

Application

乙酰丙酮镓(III)可用于
  • 作为前驱体经由溶剂热法合成纳米晶体氧化镓尖晶石,用于光催化、电池正极材料和电催化等多种应用。
  • 原位电还原制造Li金属负极上的LiGa合金层。它抑制锂硫电池负极枝晶形成。
  • 热溶剂合成法(hot-solvent synthesis)制备高效的镓-铂(GaPt3)纳米粒,用作析氢反应的电催化剂。
  • 合成γ-Ga2O3纳米晶体,用于制造钙钛矿太阳能电池的电子传输层。它与钙钛矿顶层形成有效的界面连接,提高电荷传输效率。

Features and Benefits

  • The high purity (99.99% trace metals basis) ensures that no impurities interfere with the synthesis process, leading to higher yields and better quality of the gallium compounds.
  • High purity enhances catalytic activity and selectivity, reducing the formation of by-products and improving overall reaction efficiency.
  • The absence of trace metal impurities ensures the integrity and performance of the thin films, resulting in improved device efficiency and longevity of optoelectronic devices.
  • The high purity of the precursor minimizes defects and impurities in the semiconductor materials, enhancing their electrical properties and performance.


pictograms

Health hazardExclamation mark

signalword

Warning

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves



历史批次信息供参考:

分析证书(COA)

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Structural Crystallography and Crystal Chemistry
Dymock K and Palenik GJ
Acta Crystallographica Section B, Structural Crystallography and Crystal Chemistry, 30(5), 1364-1366 (1974)
Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor
Chang KW,Wu JJ
Applied Physics. A, Materials Science & Processing, 77(6), 769-774 null
Growth of gallium oxide film from gallium acetylacetonate by atomic layer epitaxy.
Nieminen M,et al
Journal of Materials Chemistry, 6, 27-31 null



全球贸易项目编号

货号GTIN
393541-25G04061831981988
393541-5G04061831981995