553131
四(乙基甲基胺基)锆(IV)
≥99.99% trace metals basis
别名:
TEMAZ, 四(乙基甲基氨基)锆(IV)
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关于此项目
线性分子式:
Zr(NCH3C2H5)4
化学文摘社编号:
分子量:
323.63
MDL编号:
UNSPSC代码:
12352103
PubChem化学物质编号:
NACRES:
NA.23
方案
≥99.99% trace metals basis
表单
liquid
反应适用性
core: zirconium
沸点
81 °C/0.1 mmHg (lit.)
密度
1.049 g/mL at 25 °C (lit.)
SMILES字符串
CCN(C)[Zr](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Zr/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI key
SRLSISLWUNZOOB-UHFFFAOYSA-N
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一般描述
Tetrakis(ethylmethylamino)zirconium (TEMAZ or TEMAZr) is a colorless, thermally stable organozirconium MOCVD compound. It is soluble in non-polar solvents such as petroleum ether and dichloromethane, but insoluble in water. TEMAZ is widely used as a zirconium precursor in semiconductor manufacturing. We provide it with ≥99.99% purity on a trace metals basis, ensuring ppb-level trace metal impurities, making it suitable for high-quality thin films.
应用
Tetrakis(ethylmethylamido)zirconium(IV) is used
- As a Zirconium precursor in atomic layer deposition (ALD) to create ZrO₂ nanocoatings on cathode-active materials, enhancing interfacial stability and electrochemical performance in solid-state battery applications.
- As an organometallic precursor in low-temperature solution processing to synthesize chalcogenide perovskite films, facilitating the formation of carbon-free, oxygen-free BaZrS₃ for optoelectronic applications.
- As a precursor in plasma-enhanced atomic layer deposition to fabricate high-quality ZrO₂-containing HfₓZr₁₋ₓO₂ thin films, for advanced ferroelectric memory device applications.
特点和优势
- High-purity (≥99.99% trace metals basis) precursors to prevent impurities from affecting film properties.
- Analyzing 32+ elements at ppb levels ensures suitability for forming uniform films in semiconductor applications.
- Offers <10 ppm chloride by ion chromatography, crucial for high-quality films in semiconductor applications. Chloride can adversely affect film quality by altering composition, increasing surface roughness, introducing defects that degrade electrical performance, and impairing adhesion, leading to delamination or cracking.
警示用语：
Danger
危险分类
Eye Irrit. 2 - Flam. Liq. 2 - Skin Irrit. 2 - STOT SE 3 - Water-react 2
靶器官
Respiratory system
储存分类代码
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
闪点(°F)
50.0 °F - closed cup
闪点(°C)
10 °C - closed cup
个人防护装备
Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter
法规信息
危险化学品
此项目有
Atomic layer deposition of metal fluorides using HF-pyridine as the fluorine precursor
Younghee Lee, et al.
Chemistry of Materials, 28, 2022-2032 (2016)
ZrO2 monolayer as a removable etch stop layer for thermal Al2O3 atomic layer etching using hydrogen fluoride and trimethylaluminum
David R Zywotko, et al.
Chemistry of Materials, 32, 10055-10065 (2020)
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