646687
硅
wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
可持续性特点
别名:
硅元素
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关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
does not contain
dopant
sustainability
Sustainability features
diam. × thickness
2 in. × 0.5 mm
matrix
Silicon base material
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<100>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
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氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
硅晶片或基底的“切片”可应用于集成电路、太阳能电池等的制造中。它们可用作各种微电子设备的基底。
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 100 - 3000Ωcm
Application
- Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.：该文解决了在锂离子电池中采用高性能硅负极的挑战和实际应用，提供增强效率的创新解决方案(Khan et al., 2024)。
- Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.：研究改进了自支撑钙钛矿氧化物制造的应变工程，对于各种高纯硅的学术应用有重要意义(Yun et al., 2024)。
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存储类别
11 - Combustible Solids
闪点 (F)
Not applicable
闪点 (°C)
Not applicable
PPE（个人防护设备）
Eyeshields, Gloves, type N95 (US)
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