647675
硅
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
别名:
Silicon element
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关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
boron as dopant
greener alternative product characteristics
Design for Energy Efficiency
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sustainability
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diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<100>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm
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Application
<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.
Packaging
1EA refers to 1 wafer and 5EA refers to 5 wafers
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