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Merck
CN

647675

Sigma-Aldrich

greener alternative

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

别名:

Silicon element

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关于此项目

线性分子式:
Si
CAS Number:
分子量:
28.09
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

质量水平

包含

boron as dopant

环保替代产品特性

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

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直径× 厚度

2 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

环保替代产品分类

半导体性质

<100>, P-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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一般描述

氧含量:≤ 1~1.8×1018/cm3;碳含量:≤ 5×1016/cm3;晶棒直径:1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm
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应用

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

包装

1EA refers to 1 wafer and 5EA refers to 5 wafers

储存分类代码

13 - Non Combustible Solids

WGK

nwg

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

新产品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
Bo-Soon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

商品

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

实验方案

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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