跳转至内容
Merck
CN

主要文件

查看所有文档

647675

硅

greener alternative

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

别名:

Silicon element

登录 查看组织和合同定价。

选择尺寸

变更视图

关于此项目

线性分子式:
Si
化学文摘社编号:
7440-21-3
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
24883416
UNSPSC Code:
12352300
MDL number:
MFCD00085311
技术服务
需要帮助？我们经验丰富的科学家团队随时乐意为您服务。
让我们为您提供帮助

Quality Level

100

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm
We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.

Application

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Packaging

1EA refers to 1 wafer and 5EA refers to 5 wafers

Still not finding the right product?

Explore all of our products under 硅

存储类别

13 - Non Combustible Solids

wgk

nwg

ppe

Eyeshields, Gloves, type N95 (US)

法规信息

新产品

此项目有

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKDB4578
MKDB2378
MKDB0606
MKCZ2306
MKCV0098

没有发现合适的版本？

如果您需要特殊版本，可通过批号或批次号查找具体证书。

搜索COA

已有该产品？

在文件库中查找您最近购买产品的文档。

访问文档库

实验方案

Negative Photoresist Procedure

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

商品

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Chengyong Li et al.
Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
查看所有相关文献

全球贸易项目编号

货号GTIN
647675-1EA04061832731025
647675-5EA04061832731032