Merck
CN

On the origin of contact resistances of organic thin film transistors.

Advanced materials (Deerfield Beach, Fla.) (2012-06-26)
Marko Marinkovic, Dagmawi Belaineh, Veit Wagner, Dietmar Knipp
摘要

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.

材料
货号
品牌
产品描述

Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 1.0 M in THF
Sigma-Aldrich
六甲基二硅氮烷, reagent grade, ≥99%
Sigma-Aldrich
双(三甲基硅基)氨基钠 溶液, 1.0 M in THF
Sigma-Aldrich
双(三甲基硅基)酰胺钾 溶液, 1 M in THF
Sigma-Aldrich
双(三甲基硅烷基)氨基钾, 95%
Sigma-Aldrich
双三甲基硅基胺基锂, 97%
Sigma-Aldrich
六甲基二硅氮烷, ReagentPlus®, 99.9%
Supelco
六甲基二硅氮烷, for GC derivatization, LiChropur, ≥99.0% (GC)
Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 1 M in toluene
Sigma-Aldrich
双(三甲基硅基)氨基钠, 95%
Sigma-Aldrich
双(三甲基硅基)酰胺钾 溶液, 0.5 M in toluene
Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 1.5 M in THF
Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 1.0 M in hexanes
Sigma-Aldrich
双(三甲基硅基)氨基钠 溶液, 40% in THF
Sigma-Aldrich
六甲基二硅氮烷, produced by Wacker Chemie AG, Burghausen, Germany, ≥97.0% (GC)
Sigma-Aldrich
双(三甲基硅基)氨基钠 溶液, 0.6 M in toluene
Sigma-Aldrich
三[N,N-双(三甲基甲硅烷基)酰胺]钇
Sigma-Aldrich
双(三甲基硅基)酰胺钾 溶液, 1.0 M in 2-methyltetrahydrofuran
Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 1 M in tert-butyl methyl ether
Sigma-Aldrich
双(三甲基硅基)氨基锂 溶液, 0.5 M in 2-methyltetrahydrofuran
Sigma-Aldrich
双(三甲基硅基)酰胺钾 溶液, 1.0 M in methyl tert-butyl ether