grade
certified reference material
agency
IRMM®
manufacturer/tradename
JRC
resistivity
13-16 μΩ-cm, 20°C
bp
4742 °C (lit.)
mp
2468 °C (lit.)
density
8.57 g/mL at 25 °C (lit.)
application(s)
general analytical
format
matrix material
SMILES string
[Nb]
InChI
1S/Nb
InChI key
GUCVJGMIXFAOAE-UHFFFAOYSA-N
Analysis Note
For more information please see:
IRMM526C
IRMM526C
Legal Information
IRMM is a registered trademark of European Commission
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存储类别
13 - Non Combustible Solids
wgk
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
Christos D Malliakas et al.
Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
Huaxiang Yi et al.
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
Tzyy-Jiann Wang et al.
Optics express, 20(27), 28119-28124 (2012-12-25)
We report ultra-smooth LiNbO(3) microdisk resonators fabricated by selective ion implantation, chemical etching, and thermal treatment. The undercut microdisk structure is produced by chemically etching the buried lattice damage layer formed by selective ion implantation. By thermal treatment, surface tension
全球贸易项目编号
| 货号 | GTIN |
|---|---|
| IRMM526C-1EA | 04061832660677 |