Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

Physical review letters (2013-05-21)

K W Urban, J Mayer, J R Jinschek, M J Neish, N R Lugg, L J Allen

摘要

Newly developed achromatic electron optics allows the use of wide energy windows and makes feasible energy-filtered transmission electron microscopy (EFTEM) at atomic resolution. In this Letter we present EFTEM images formed using electrons that have undergone a silicon L(2,3) core-shell energy loss, exhibiting a resolution in EFTEM of 1.35 Å. This permits elemental mapping beyond the nanoscale provided that quantum mechanical calculations from first principles are done in tandem with the experiment to understand the physical information encoded in the images.

材料

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品牌

产品描述

215619

Sigma-Aldrich

硅, powder, −325 mesh, 99% trace metals basis

633097

Sigma-Aldrich

硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

646687

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647101

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647764

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

647535

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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

343250

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硅, pieces, 99.95% trace metals basis

647705

Sigma-Aldrich

硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647772

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硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647543

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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647802

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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647780

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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647799

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm