Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method.

Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method.

Journal of nanoscience and nanotechnology (2013-07-19)

Sukhyung Park, Kyoungah Cho, Sangsig Kim

摘要

In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 microA/W, which is greater than that of the transferred Si NWs.

材料

产品编号

品牌

产品描述

215619

Sigma-Aldrich

硅, powder, −325 mesh, 99% trace metals basis

266418

Sigma-Aldrich

碲, powder, −200 mesh, 99.8% trace metals basis

646687

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

633097

Sigma-Aldrich

硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

264865

Sigma-Aldrich

碲, powder, −30 mesh, 99.997% trace metals basis

204544

Sigma-Aldrich

碲, 99.999% trace metals basis

647101

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647764

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

452378

Sigma-Aldrich

碲, shot, ≤2 mm, 99.999% trace metals basis

263303

Sigma-Aldrich

碲, granular, −5-+50 mesh, 99.99% trace metals basis

647535

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647799

Sigma-Aldrich

硅, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm

343250

Sigma-Aldrich

硅, pieces, 99.95% trace metals basis

647705

Sigma-Aldrich

硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647780

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647802

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647772

Sigma-Aldrich

硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647543

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm