The effect of growth temperature variation on partially bismuth filled carbon nanotubes synthesis using a soft semi-metallic template.

The effect of growth temperature variation on partially bismuth filled carbon nanotubes synthesis using a soft semi-metallic template.

Journal of nanoscience and nanotechnology (2014-04-18)

R K Sahoo, C Jacob

摘要

The dewetting of a low melting point metal thin film deposited on silicon substrates was studied. The experimental results suggest that the change in the growth temperature affects the nanostructures that form. Based on the experimental results, the temperature which yielded the smallest features for the growth of nanotubes is determined. The mechanism by which these nano-templates become an efficient seeds for the growth of the carbon nanotubes is discussed. The partial bismuth filling inside the CNTs was optimized. Based on the results, a schematic growth model for better understanding of the process parameters has also been proposed.

材料

产品编号

品牌

产品描述

215619

Sigma-Aldrich

硅, powder, −325 mesh, 99% trace metals basis

646687

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

633097

Sigma-Aldrich

硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

265462

Sigma-Aldrich

铋, powder, −100 mesh, 99% trace metals basis

264008

Sigma-Aldrich

铋, powder, −100 mesh, ≥99.99% trace metals basis

647101

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

556130

Sigma-Aldrich

铋, pieces, 1-12 mm, 99.999% trace metals basis

647764

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

265470

Sigma-Aldrich

铋, shot, 4-30 mesh, 99.9% trace metals basis

647535

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647799

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

343250

Sigma-Aldrich

硅, pieces, 99.95% trace metals basis

647705

Sigma-Aldrich

硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647780

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647802

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647772

Sigma-Aldrich

硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647543

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

GF73529051

硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%

452386

Sigma-Aldrich

铋, beads, 1-5 mm, 99.999% trace metals basis

GF46268433

硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

GF85045631

铋, foil, not light tested, 50x50mm, thickness 0.01mm, permanent polyester support, 99.97%

GF91141792

硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%

GF71817543

硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%

GF89918500

铋, foil, 25x25mm, thickness 0.25mm, 100%

GF10907377

硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%

GF85621923

硅, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%

GF70438518

硅, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%

GF09816307

铋, foil, light tested, 50x50mm, thickness 0.02mm, permanent polyester support, 99.97%

GF72027266

硅, disks, 13mm, thickness 0.38mm, single crystal, 100%