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Merck
CN
  • Nanostructured hybrid of immiscible gold and silicon and its effect on proliferation and adhesion of fibroblasts and osteoblasts.

Nanostructured hybrid of immiscible gold and silicon and its effect on proliferation and adhesion of fibroblasts and osteoblasts.

Journal of biomedical nanotechnology (2014-04-23)
Priyatha Premnath, Bo Tan, Krishnan Venkatakrishnan
摘要

Hybrid biomaterials are a combination of two or more different materials that work synergistically to produce superior properties. Nano structuring of such hybrid materials has also posed complications. In this study, we present, for the first time a nanofibrous hybrid of gold and silicon fabricated by femtosecond laser synthesis for tissue engineering applications. The formation of a completely new phase, Au3Si (212) is reported. The formation mechanism is explained by vapor condensation. Particle sizes of 2-10 nm and 37-49 nm for gold and gold concentrations of 35-78% are achieved. The effect of this hybrid on cell growth was assessed using fibroblasts and osteoblasts. There was a significant decrease in both osteoblast and fibroblast proliferation with the increase of gold in the hybrid nanostructure. This novel hybrid nanofibrous matrix provides a method to effectively control the proliferation and adhesion of cells. Femtosecond laser synthesis presents a new standard by which not only a single element biomaterial but also multiple immiscible element hybrid biomaterials can be fabricated. This technique provides a paradigm shift in the fabrication of novel nanostructured immiscible hybrid biomaterials.

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硅, powder, −325 mesh, 99% trace metals basis
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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金, powder, <45 μm, 99.99% trace metals basis
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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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镀金显微镜载片, layer thickness 1000 Å, 99.999% (Au)
金, rod, 50mm, diameter 3.0mm, as drawn, 99.95%
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
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硅, pieces, 99.95% trace metals basis
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硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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金, wire, diam. 0.25 mm, 99.99% trace metals basis
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
金, sphere, 20pcs, diameter 0.5mm, 99.99%
金, insulated wire, 1m, conductor diameter 0.025mm, insulation thickness 0.005mm, polyester insulation, 99.99%
金, insulated wire, 2m, conductor diameter 0.05mm, insulation thickness 0.007mm, polyimide insulation, 99.99%
金, insulated wire, 5m, conductor diameter 0.125mm, insulation thickness 0.014mm, polyester insulation, 99.99%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
金, insulated wire, 2m, conductor diameter 0.05mm, insulation thickness 0.007mm, polyester insulation, 99.99%
金, insulated wire, 0.1m, conductor diameter 0.125mm, insulation thickness 0.016mm, PTFE (polytetrafluoroethylene) insulation, 99.99%
金, rod, 10mm, diameter 3.0mm, as drawn, 99.95%
硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
金, insulated wire, 2m, conductor diameter 0.125mm, insulation thickness 0.014mm, polyester insulation, 99.99%
硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%