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  • Biochemistry and semiconductor electronics--the next big hit for silicon?

Biochemistry and semiconductor electronics--the next big hit for silicon?

Journal of physics. Condensed matter : an Institute of Physics journal (2012-04-03)
Stuart Lindsay
摘要

Two recent developments portend a new era for silicon electronics in biomedical applications. Firstly, highly specific chemical recognition and massively parallel sample preparation techniques are being combined with VLSI to make new kinds of analytical chips. Secondly, critical dimensions are beginning to approach the size of biomolecules, opening new pathways for physical interactions between molecules and semiconductor structures. Future generations of hybrid chemical-CMOS devices could revolutionize diagnosis and make personalized medicine cheap enough to become widespread.

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Sigma-Aldrich
硅, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, pieces, 99.95% trace metals basis
Sigma-Aldrich
硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
硅, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
硅, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
硅, disks, 13mm, thickness 0.38mm, single crystal, 100%
硅, rod, 50mm, diameter 2.0mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
硅, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
硅, rod, 100mm, diameter 25mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
硅, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%