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Merck
CN
  • Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers.

Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers.

Annual review of chemical and biomolecular engineering (2012-06-14)
Nathan Marchack, Jane P Chang
摘要

The invention of the transistor followed by more than 60 years of aggressive device scaling and process integration has enabled the global information web and subsequently transformed how people communicate and interact. The principles and practices built upon chemical processing of materials on silicon have been widely adapted and applied to other equally important areas, such as microfluidic systems for chemical and biological analysis and microscale energy storage solutions. The challenge of continuing these technological advances hinges on further improving the performance of individual devices and their interconnectivity while making the manufacturing processes economical, which is dictated by the materials' innate functionality and how they are chemically processed. In this review, we highlight challenges in scaling up the silicon wafers and scaling down the individual devices as well as focus on needs and challenges in the synthesis and integration of multifunctional materials.

材料
产品编号
品牌
产品描述

Sigma-Aldrich
硅, powder, −325 mesh, 99% trace metals basis
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, pieces, 99.95% trace metals basis
Sigma-Aldrich
硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
硅, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
硅, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
硅, disks, 13mm, thickness 0.38mm, single crystal, 100%
硅, rod, 50mm, diameter 2.0mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
硅, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
硅, rod, 100mm, diameter 25mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
硅, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%