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Merck
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  • Biomaterials. Electronic dura mater for long-term multimodal neural interfaces.

Biomaterials. Electronic dura mater for long-term multimodal neural interfaces.

Science (New York, N.Y.) (2015-01-13)
Ivan R Minev, Pavel Musienko, Arthur Hirsch, Quentin Barraud, Nikolaus Wenger, Eduardo Martin Moraud, Jérôme Gandar, Marco Capogrosso, Tomislav Milekovic, Léonie Asboth, Rafael Fajardo Torres, Nicolas Vachicouras, Qihan Liu, Natalia Pavlova, Simone Duis, Alexandre Larmagnac, Janos Vörös, Silvestro Micera, Zhigang Suo, Grégoire Courtine, Stéphanie P Lacour
摘要

The mechanical mismatch between soft neural tissues and stiff neural implants hinders the long-term performance of implantable neuroprostheses. Here, we designed and fabricated soft neural implants with the shape and elasticity of dura mater, the protective membrane of the brain and spinal cord. The electronic dura mater, which we call e-dura, embeds interconnects, electrodes, and chemotrodes that sustain millions of mechanical stretch cycles, electrical stimulation pulses, and chemical injections. These integrated modalities enable multiple neuroprosthetic applications. The soft implants extracted cortical states in freely behaving animals for brain-machine interface and delivered electrochemical spinal neuromodulation that restored locomotion after paralyzing spinal cord injury.

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硅, powder, −325 mesh, 99% trace metals basis
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, pieces, 99.95% trace metals basis
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硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
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硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
硅, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
硅, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
硅, disks, 13mm, thickness 0.38mm, single crystal, 100%
硅, rod, 50mm, diameter 2.0mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
硅, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
硅, rod, 100mm, diameter 25mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, rod, 50mm, diameter 5mm, single crystal, -111, 99.999%
硅, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%